Sandisk Assigned Three Patents

Storage controller connected to flash memory module, execute loop
used to carry out tasks related to reading or writing data from module
Sandisk Enterprise, Milpitas, CA, has been assigned a patent (8,621,138) developed by two co-inventors for a “storage controller connected to a flash memory module, an execute loop used to carry out tasks related to reading or writing data from the module.“

The co-inventors are Aaron K. Olbrich, Morgan Hill, CA, and Douglas A. Prins, Laguna Hills, CA.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “In a storage controller connected to a flash memory module, an execute loop used to carry out tasks related to reading or writing data from the module. The loop includes reading a data structure from a queue and carrying out a task specified by the data structure, unless resources required by the task are not available, in which event the loop moves on to another data structure stored in another queue. Data structures bypassed by the loop are periodically revisited, until all tasks required are completed. Data structures store state information that is updated when tasks are completed.”

The patent application was filed on April 8, 2008 (12/082,223).

Offset non-volatile storage
Sandisk Technologies, Plano, TX, has been assigned a patent (8,614,915) developed by Jeffrey W. Lutze, San Jose, CA, and Dana Lee, Saratoga, CA, for “an offset non-volatile storage.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A plurality of non-volatile storage elements on a common active layer are offset from neighbor non-volatile storage elements. This offsetting of non-volatile storage elements helps reduce interference from neighbor non-volatile storage elements. A method of manufacture is also described for fabricating the offset non-volatile storage elements.”

The patent application was filed on June 24, 2010 (12/822,584).

Substrate bias during program of non-volatile storage
SanDisk Technologies, Plano, TX, has been assigned a patent (8,638,606) developed by Dengtao Zhao, Guirong Liang, and Deepanshu Dutta, Santa Clara, CA, for a “substrate bias during program of non-volatile storage.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A programming technique which reduces program disturb in a non-volatile storage system is disclosed. A positive voltage may be applied to a substrate (e.g., p-well) during programming. Biasing the substrate may improve boosting of channels of unselected NAND strings, which may reduce program disturb. The substrate may be charged up during the programming operation, and discharged after programming. Therefore, for operations such as verify and read, the substrate may be grounded. In one embodiment, the substrate is charged just prior to applying a program pulse, then discharged prior to a program verify operation. In one embodiment, the substrate is charged while unselected word lines are ramped up to a pass voltage. The substrate bias may depend on program voltage, temperature, and/or hot count.“

The patent application was filed on Sept. 16, 2011 (13/234,539).