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Freescale Assigned Patent

Memory system with redundant storage and error correction

Freescale Semiconductor, Inc., Austin, TX, has been assigned a patent (8,589,737) developed by four co-inventors for a “memory system with redundant storage and error correction.”

The co-inventors are Michael Rohleder, Unterschleissheim, Germany, Gary Hay, Motherwell, UK, Stephan Mueller, Taunusstein, Germany, and Manfred Thanner, Neubiberg, Germany.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A system comprises at least two random access memory (RAM) elements arranged to store data redundantly. The system further comprises RAM routing logic comprising comparison logic operably coupled to the at least two RAM elements and arranged to compare redundant data read from the at least two RAM elements, and check and validation logic, independent of the RAM routing logic, operably coupled to the at least two RAM elements and arranged to additionally detect an error in the redundant data read from the at least two RAM elements and provide an error indication signal to the RAM routing logic in response thereto. The RAM routing logic further comprises selection logic arranged to dynamically select redundant data from one of the at least two RAM elements based on the comparison of the redundant data and the error indication signal. “

The patent application was filed on June 20, 2008 (12/995,297).

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