Solid State Storage Solutions Assigned Patent

Solid State Storage Solutions, Inc. Marshall, TX, has been assigned a patent (8,503,235) developed by four co-inventors for a “nonvolatile memory with faulty cell registration.”

The co-inventors are Kunihiro Katayama, Chigasaki, Japan, Takayuki Tamura, Satoshi Watatani, Yokohama, Japan, Kiyoshi Inoue, Tokyo, Shigemasa Shiota, Tachikawa, Japan, and Masashi Naito, Kodaira, Japan.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.”

The patent application was filed on Nov. 17, 2011 (13/298,548).

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(Add also sTec to the list. Editor)