Toshiba Starts Second Phase Construction of No. 5 NAND Flash Facility

Toshiba Corporation held a groundbreaking ceremony in readiness for the start of construction of Phase 2 of Fab 5, the company’s fabrication facility at its Yokkaichi Operations memory production facility in Mie Prefecture.

Toshiba will expand Fab 5 to secure manufacturing space for NAND flash memories fabricated with next generation process technology and for 3D memories. Construction will be completed in summer next year, and decisions on equipment investments and production levels will reflect market trends.

Three fabs at Yokkaichi Operations currently mass produce NAND flash memories, including Fab 5 phase 1. Fab 5’s construction was planned around two phases, the first of which went into operation in July 2011. After giving careful consideration to the balance of product supply and demand, and noting a recovery driven by growing demand for smartphones, tablets, SSD for enterprise servers, Toshiba now anticipates further medium- to long-term market expansion and recognizes that the time is right to expand Fab 5.

Outline of Fab 5

• Structure of building: 2-story steel frame concrete, five floors
• Ground area: Approximately 38,000m²
• Total floor area: Approximately 187,000m²
• Start of Construction: First phase: July 2010, second phase: August 2013
• Completion: First Phase: May 2011, second Phase: Summer 2014 (target)
• Start of Production: First phase: July 2011, second phase to be determined later; intended primarily for technology transition of existing wafer capacity

Outline of Yokkaichi Operations

• Location: 800, Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
• Established: January 1992
• GM: Tomoharu Watanabe
• Employees: Approximately 5,200 (as of end of March, 2013, regular employees of Toshiba)
• Site area: Approximately 436,800 m² (including Fab 5)
• Total floor area: Approximately 647,000m² (including Fab 5)

Read also:
NAND Fab 5 in Yohkkaichi, Japan, Expanded by Toshiba
Completed in summer next year