Khandker Quader CEO, SK hynix

SK hynix memory solutions (SKHMS) announced that Dr. Khandker Nazrul Quader has joined SKHMS as president and CEO effective June 21.

"It has been nearly one year since SK hynix acquired controller expertise through the acquisition of Link-A-Media Devices, now SKHMS," stated Dr. Park, president and CEO, SK hynix, and COB SKHMS. "The addition of Dr. Quader’s leadership with his extensive background in NAND technology and design, advanced non-volatile memories and DRAM storage technologies and his extensive experience and expertise in multi-level flash memory management systems will further leverage the value of the SKHMS team, especially at this time of significant market growth in the areas of flash memory based storage solutions. It is my pleasure to welcome Dr. Quader as part of SK family."

"I’m very excited to join and lead the SKHMS (formerly Link-A-Media) team at a time when the flash memory industry is poised for phenomenal growth in SSD and mobile markets," said Quader. "The integration of the controller solution know-how of SKHMS combined with the advanced non-volatile memories and DRAM technologies and the manufacturing capabilities of SK hynix is producing products across multiple market segments. Full vertical integration of controller hardware, advanced flash memory systems architecture, firmware, NAND, other forms of non-volatile memory, and DRAM coupled with high volume memory manufacturing capability is quite rare in the industry and allows our customers to have a one-stop storage solution provider with the capacity, support and expertise the industry demands. The combined focus of SK hynix and SKHMS provides excellent opportunity to become a market leader in enterprise, client and mobile storage."

 Dr. Quader has 29 years’ experience in the semiconductor industry. Prior to joining SKHMS, he worked for SanDisk Corp. for almost eighteen years. He served as the SVP of memory technology, design and product development and an officer of the company at the time he left SanDisk. He has also worked for both IBM and Intel Corp. designing and developing DRAM, static RAM and non-volatile memory. He has been instrumental in the development and productization of multi-level flash memories (3 and 4bits/cell NAND), led multiple generations of NAND flash memory scaling and led efforts to develop NAND replacement technologies. He has played a key role in leading SanDisk/Toshiba joint development.

He received his B.S. in Electrical Engineering and in Physics from MIT, Cambridge, MA, his M.S. in Electrical Engineering from Georgia Tech, Atlanta, GA, and his Ph.D. in Electrical Engineering from UC Berkeley, Berkeley, CA in the area of device physics and its interaction with circuits.