… As Well as Partner SanDisk

SanDisk Corporation has begun customer sampling of flash memory products based on its 1Ynm process technology, which represents its second generation 19nm manufacturing technology.

SanDisk’s achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25% reduction of the memory cell area.

This second-generation 19nm memory die uses sophisticated flash memory technology node, including advanced process innovations and cell-design solutions. SanDisk’s All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level storage management schemes help yield MLC NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk’s three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.

SanDisk’s breakthrough in shrinking the circuitry used in flash memory chips allows higher capacity products and lower cost manufacturing techniques to be employed when creating flash memory solutions. Consumers and businesses will benefit from this new manufacturing technology by having access to higher capacity and smaller-sized flash memory chips from SanDisk for mobile phones, tablets, SSDs for client and enterprise markets, and consumer products.