SST (Microchip) Assigned Two Patents
Sense amplifier for low voltage high speed sensing, high endurance non-volatile memory cell and array
By Jean Jacques Maleval | March 5, 2013 at 2:49 pmSense amplifier for low voltage high speed sensing
Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (8,354,864) developed by Hieu Van Tran, San Jose, CA, Sang Thanh Nguyen, Union City, CA, and Hung Quoc Nguyen, Fremont, CA, for a "sense amplifier for low voltage high speed sensing."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to the low impedance circuit and a reference voltage node. A second input of the comparator is coupled to a data voltage node. The first load circuit loads a reference cell coupled to the reference voltage node. The second load circuit loads a data cell coupled to the data voltage node."
The patent application was filed on Oct. 31, 2011 (13/286,166).
High endurance non-volatile memory cell and array
Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (8,384,147) developed by Nhan Do, Saratoga, CA, and Amitay Levi, Cupertino, CA, for a "high endurance non-volatile memory cell and array."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Systems of electrically programmable and erasable memory cell are disclosed. In one exemplary implementation, a cell may have two storage transistors in a substrate of semiconductor material of a first cooductivity type The first storage transistor is of the type having a first region and a second region each of a second conductivity type in the substrate The second storage transistor is of the type having a third region and a fourth region each of a second conductivity type in the substrate. Arrays formed of such memory cells and non-volatile memory cells are also disclosed."
The patent application was filed on April 29, 2011 (13/097,766).