Toshiba Develops Fast Nano Flash-100 Memory

Toshiba Corporation has developed NANO FLASH-100 much faster access for embedded microcontrollers, based on Toshiba’s original NANO FLASH.

Development background:
The functionality and high speed capabilities of embedded microcontrollers require much flash memory with much faster access rates. Toshiba has recognized and responded to this by developing NANO FLASH which merges two features: high speed programming, based on NAND flash memory cell device technology; and NOR flash memory circuit technology. It has subsequently brought this high level performance to its original microcontrollers and to ARM core-based microcontrollers. Now, as more users use ARM core-based microcontrollers, there is an emerging need for greater speed and large memory capacities. NANO FLASH-100 is suited to this market.

Features:
The NANO FLASH-100 achieves a zero-wait cycle during random access at 100MHz operation (based on Toshiba’s research in flash memory for embedded microcontrollers as of January 2013). This allows the core in ARM-based microcontrollers to utilize the superior performance and code density of applications requiring high speed and large capacity memory. Using the low power technology of NANO FLASH microcontrollers, a range of high speed, low power applications developments are available.

Toshiba will follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products and will continue the proactive development of flash memory technologies for embedded microcontrollers.