Spansion Assigned Patent

Semiconductor memory device featuring
selective data storage in stacked memory cell structure

Spansion LLC, Sunnyvale, CA, has been assigned a patent (8,289,750) developed by Naoharu Shinozaki, Kanagawa, Japan, for a "semiconductor memory device featuring selective data storage in a stacked memory cell structure."

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device including: a first memory cell including a non-volatile first variable resistance element that stores data by varying a resistance value and a selection transistor that selects the first variable resistance element; a first memory layer provided with more than one such first memory cell arranged in a plane; a second memory cell including a non-volatile second variable resistance element that stores data by varying a resistance value and a selection diode that selects the second variable resistance element; and a second memory layer provided with more than one such second memory cell arranged in a plane; wherein more than one such second memory layer is stacked over the first memory layer."

The patent application was filed on Jan. 12, 2011 (13/005,456).