Marvell International Assigned Patent

Marvell International Ltd., Hamilton, Bermuda, has been assigned a patent (8,189,381) developed by Xueshi Yang, Sunnyvale, CA, and Zining Wu, Los Altos, CA, for a "system and method for reading flash memory cells."

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A memory system includes an array of X memory cells that each includes Y storage regions. The system also includes a read module that receives a first read signal that includes a first read signal data component and a first read signal interference component from a first one of the Y storage regions. The read module also receives a second read signal from a second one of the Y storage regions. The first interference component includes interference from the second one of the Y storage regions. The system also includes a data detection module that recovers the first read signal data component from the first read signal based on the second read signal and one or more of M noiseless signal estimates. M and X are integers greater than or equal to one, and Y is an integer greater than or equal to two."

The patent application was filed on Aug. 19, 2008 (12/194,133).