New Fujitsu V Series FRAMs

Fujitsu Semiconductor America, Inc. extended its portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a voltage range of 3.0V to 5.5V, offering design flexibility for consumer and industrial applications.

      FRAM Material

The new V series includes products ranging from 16kbit to 256kbit, covering both I2C and SPI interfaces. The first two members of the series, the MB85RC16V and MB85RC64V, are available in production quantities. The devices feature I2C serial interfaces at an operating frequency of 400kHz, covering the densities of 16kbit and 64kbit, respectively. The V series products deliver high reliability, with 10 years data retention at 85 degrees C as well as an endurance of 1 trillion read/write cycles. The products have a guaranteed operation over the industrial temperature range of -40 degrees C to +85 degrees C.

"The Fujitsu V series FRAMs accommodate the common CMOS voltage range of 3.3V to 5V, while allowing +10% voltage swing tolerance," said Tong Swan Pang, senior manager of marketing at Fujitsu Semiconductor America. "The wide voltage range of this new series enables system designers to consolidate their designs around a single FRAM for multiple platforms. The flexibility of the V series enhances logistical and operational efficiency, while driving component costs down."

Fujitsu plans a midyear launch of a third device, the MB85RS64V, a 64kbit FRAM with an SPI interface. Other devices incorporating 256kbit with I2C or SPI interfaces will also become available in 2012. All products of this series are available in the 8-pin plastic SOP packages, which are compatible with most EEPROMs.

Variety of FRAMs
Apart from the V series, Fujitsu offers a variety of low-voltage FRAM devices operating between 2.7 and 3.0V, which are equipped with I2C, SPI or parallel interfaces. Density levels vary from 16kbit to 4Mbit.

FRAM is a new generation of nonvolatile memory that outperforms memories like EEPROM and Flash, consumes less power, and offers higher speed and virtually unlimited endurance to multiple read-and-write operations. FRAM is non-volatile, but operates in other respects like RAM. FRAM has become an alternative to EEPROM in many applications, especially those with frequent data logging functions and low power consumption, where it is essential to prevent any data loss-even in the event of a sudden power shutdown.

Fujitsu has been mass-producing FRAM for more than 10 years. In addition to standalone FRAM products, it has embedded FRAM into CMOS circuits with an emphasis on performance and efficiency. This storage medium is used in applications including smart cards, RFID, security ICs and many other applications that require high-performance nonvolatile memory.