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Elpida Develops Resistance RAM Prototype

64Mb nonvolatile memory, more write endurance than NAND flash

Japanese chipmaker Elpida Memory Inc. announced the development of a high-speed non-volatile resistance memory (ReRAM) prototype.

elpida_resistance_ram

As the ReRAM prototype was made using a 50nm process technology it has a memory cell array operation of 64 megabits, one of the highest densities possible for ReRAM.

The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. Further work on ReRAM development is being conducted with Sharp Corporation, the National Institute of Advanced Industrial Science and Technology (AIST, another Japanese public institution) and the University of Tokyo.

ReRAM (Resistance Random Access Memory) is next-generation semiconductor
memory technology that uses material which changes resistance in
response to changes in the electric voltage. This new type of
non-volatile memory can store data even when the power supply is turned
off. Its most attractive feature is that it can read/write data at high
speeds using little voltage. While dynamic random-access memory (DRAM)
is superior to existing non-volatile memory with respect to read/write
speeds and endurance, DRAM quickly loses data when the power supply is
removed. NAND flash memory, a leading example of nonvolatile memory,
retains data even when the power is removed but has performance measures
that are inferior to DRAM.

ReRAM is a type of semiconductor memory that contains the advantages of both DRAM and NAND flash memory. It has a write speed of 10ns, about the same as DRAM, and write endurance of more than a million times, or more than 10 times greater than NAND flash.

Elpida plans to continue development toward a 2013 goal of volume production
of ReRAM in the gigabit capacity class using a 30nm process technology.
If the high-speed durable new memory can be provided at low cost it
will contribute enormously to a reduction of memory power consumption.
This will make it a storage (recording medium) option in information
technology products such as smartphones, tablet devices and ultra-thin
light notebook PCs.

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