1V-driven NAND Paves Way for SSD

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1V-driven NAND Paves Way for SSD Data Writing Speed of 10GB/s
A Japanese research group developed a technology to make a NAND flash memory whose drive voltage is as low as 1V and power consumption is 86% lower than existing NAND flash memories. The group consists of Ken Takeuchi, associate professor at the Department of Electrical Engineering and Information Systems, Graduate School of Engineering of the University of Tokyo, and researchers of Japan’s Advanced Industrial Science and Technology (AIST).

Summary of the ‘Single-cell Self-boost method’:
A ferroelectric substance is used for the cell transistor of NAND flash memory. With a ferroelectric NAND, it is easy to lower the power consumption by lowering the voltage. The power consumption was reduced by 86%. The data writing speed of SDD was enhanced by up to 6.9 times.