Toshiba to Build Fifth NAND Flash Facility Next to Yokkaichi, Japan

Tokyo–Toshiba Corporation will construct a fabrication facility on a site next to Yokkaichi Operations, its memory production facility in Mie Prefecture. Construction of the new fab, Fab 5, will start in July this year.

Yokkaichi Operations currently has four NAND flash memory fabs. Toshiba has given careful consideration to the timing of the start of construction of the new fab, most notably in light of the fall in demand that followed the global recession in the fall 2008. However, as demand begins to recover with the market penetration of smart phones and other new applications, and foreseeing further market expansion in the medium- and long-term, Toshiba now recognizes that the time is right to construct a new fab.

By adding new production capacity, Toshiba will assure its ability to respond quickly and decisively to market expansion and will further strengthen its competitiveness in the semiconductor business.

Plans call for the completion of Fab 5’s construction in spring 2011. The fine details of the investment plan and the fab’s capacity will be decided by reviewing market trends.

The scale of Fab 5 will be comparable with that of Fab 4, which is now in operation. The new fab will have a quake-absorbing structure, and be designed for minimal environmental impact. Energy-saving clean rooms and effective use of waste heat are expected to cut CO2 emissions to a level 12% lower than from Fab 4.

Toshiba proactively promotes timely investment that anticipates market trends, and will continue to develop new technologies, including advanced process technology and memories, in order to enhance its competitiveness in the memory business.