1.8V Data Interface MRAM for RAID Storage Applications

Everspin Technologies, Inc. is introducing its first dual-supply magnetoresistive random access memory (MRAM) product designed to directly interface with next-generation logic products requiring low voltage I/Os. RAID systems using advanced logic controllers operating with 1.8 volt I/Os will be able to seamlessly interface with MRAM to take advantage of its unique features.

"Everspin currently supplies MRAM products to a wide range of RAID controller applications," said Dr. Saied Tehrani, Everspin’s chief operating officer. "Our new dual- supply MRAM products are ideally suited for future generations of RAID controllers migrating to advanced processes requiring low voltage interface support."

The MR0D08B dual supply MRAM product operates from a VDD main supply voltage of 3.0 to 3.6V and allows a wide, user defined I/O operating range by setting the VDDQ I/O supply voltage level from 1.65 to 3.6V. Typical applications using 1.8V logic controllers would set VDDQ at 1.8V to support direct connections between the controller and the MRAM, eliminating any requirements for level shifters. The devices are housed in a small footprint 8mm x 8mm, 48-BGA package with 0.75mm ball centers.

Everspin’s MRAM technology features high reliability, fast read/write, instant non-volatility and infinite endurance. Everspin’s product portfolio includes 8- and 16-bit parallel I/O products ranging from 256Kb through 4Mb densities in BGA and TSOP packages and serial peripheral interface I/O products ranging from 256Kb through 1Mb densities in DFN packages. All products are readily available with typical lead times of stock to six weeks.

With products in use today across several markets including data storage, industrial automation, gaming, energy management, communications, transportation and avionics, Everspin continues to rapidly expand its product family to support an even wider range of market applications.