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Crocus Technology Taps Into Capres for MRAM Equipment Upgrade

CIPTech tool determines tunneling resistance on magnetic tunnel junction stacks.

Capres A/S, maker of technology for direct nano- and micro-scale electrical characterization of materials, and Crocus Technology, developer of Magnetic Random Access Memory (MRAM), announced the implementation of CIPtech, the newest tool from Capres, for enabling measurements associated with advanced Spin Torque Technology (STT) at Crocus Technology. This unique new tool, designed especially for the MRAM and magnetic recording Read Head industries, enables Crocus to determine tunneling resistance on MTJ films prior to final test. With this upgrade, measurement that used to require weeks of sample preparation can now be performed within minutes.

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CIPTech

"The addition of the new Capres CIPtech tool reaffirms Crocus’ commitment to focus on innovation, as we continue to expand our IP base in the emerging MRAM technology space," said Jean Pierre Braun, CEO and founder of Crocus Technology. "This new tool is a perfect complement to our state-of-the-art environment for the design and development of MRAM technology."

The CIPTech platform is used for measuring the critically important tunneling resistance and magneto-resistance (RA & MR) directly on blanket magnetic tunnel junction (MTJ) films for MRAM (Magnetic Random Access Memory) and magnetic recording Read Head applications. The latest vertical magnetic field capability of the tool allows characterizing next-generation MRAM devices based on Spin Torque Transfer (STT). With this tool, Crocus is now equipped for efficient prototyping and manufacturing of advanced STT.

"Both Capres and Crocus share a common vision to be at the very forefront of technological development in each of our markets," said Olivier Dulac, VP Sales and Marketing at Capres. "Our CIPTech product will give Crocus another key tool to continue pushing their technological edge in the field of MRAM development."

About Magnetic Random Access Memory
MRAM’s unique characteristics make it particularly suitable to a wide variety of telecommunication, networking, computing and handheld applications currently using SRAM and/or flash memory technology. It is the only scalable new memory technology providing non-volatility, unlimited-write-endurance, high-density, and high-speed. It is particularly well-suited to applications requiring high data reliability and high performance, and has the unique potential of becoming the universal embedded memory technology for systems-on-chip devices.

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