Hynix Collaborates With Nanosys for Flash Memory Program

Nanosys, Inc. announced that Hynix
Semiconductor Inc. has
joined Nanosys’ Memory Technology Access Program (M-TAP). Under the
M-TAP, Hynix will collaborate with Nanosys to apply Nanosys’ quantum
dot flash memory technologies (QDM) for NAND based flash memory.
Specific terms of the agreement were not disclosed.

Nanosys
has developed its QDM flash technologies to improve the performance
and continued scaling capabilities for a wide variety of NAND-based
flash memory designs. Participants in Nanosys’ M-TAP collaborate to
apply these proprietary technology solutions for current and future
generations of memory products.

"We
are very pleased to be collaborating with Hynix under our M-TAP
program,” said Calvin Chow, Nanosys’ Chief Executive Officer. "Hynix‘s
vision and proven ability to deploy new technologies rapidly and
successfully into the marketplace makes them an excellent
collaborator.”

“New enabling technologies that can
be rapidly implemented are required to address the immediate and
escalating demand for cost effective, high performance flash memory,”
said Dr. Seok Kiu Lee, Vice President of the R&D Division at Hynix.
“We look forward to applying Nanosys’ QDM flash technology towards this
significant need and opportunity.”

Nanosys,
Inc.

Hynix
Semiconductor Inc.