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Micron Sampling 8Gb SLC

Readind at up to 200MB/s and writing at up to 100 MB/s

Micron Technology, Inc. announced that it is the first company to
sample an 8 gigabit (Gb) single-level cell (SLC) high speed NAND
product. High speed NAND enables data to be transferred in a fraction
of the time compared to conventional NAND.

As more and more of today’s popular consumer electronic and computing
devices continue to move to silicon for storage, it is essential that
we improve how data is accessed and transferred in NAND
,” said Bill
Lauer, senior director of marketing for Micron’s memory group. “With
the new capabilities designed into high speed NAND, the performance
benefits will be visible to the consumer, allowing them to experience a
faster way of transferring digital content between devices such as
computers, digital cameras, MP3 players and cell phones
.”

SLC high speed NAND can read data at speeds up to 200 megabytes per
second (MB/s) and can write data at speeds up to 100 MB/s, achieved by
leveraging the new ONFI 2.0 specification and a four plane architecture
with higher clock speeds. In comparison, conventional SLC NAND is
limited to 40 MB/s for reading data and less than 20 MB/s for writing
data.

Designed on the 50-nanometer process node, Micron’s 8 Gb SLC high speed
NAND component is sampling now to major OEMs and controller
manufacturers with mass production expected to commence in the second
half of 2008. The company also expects to unveil future ONFI
2.0-derived NAND products in the next year.



Micron Technology, Inc.

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