Toshiba Develops 16-Die Stacked NAND Flash Memory With TSV Technology

Toshiba Corporation announced the development of the world’s first ⁽¹⁾ 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.

The prototype was shown at Flash Memory Summit 201 from August 11 to 13 in Santa Clara, CA.

The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high speed data input and output, and reduces power consumption.

Company’s TSV technology achieves an I/O data rate of over 1Gb/s which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50% ⁽²⁾ power reduction of write operations, read operations, and I/O data transfers.

This new NAND flash memory provides al solution for low latency, high bandwidth and high IO/s/Watt in flash storage applications, including high-end enterprise SSD. A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).

⁽¹⁾ As of August 6, 2015. Toshiba survey.
⁽²⁾ Compared with Toshiba’s current products.