SST (Microchip) Assigned Patent

Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (8,846,538) developed by Bomy Chen, Long Ching Wang, Cupertino, CA, and Sychi Fang, Palo Alto, CA, for “passive elements, articles, packages, semiconductor composites, and methods of manufacturing same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in the first layer, forming metal regions on sidewalls of the trenches, and forming a region of dielectric or polymer material over or in the substrate. Moreover, an exemplary method may also include forming areas of metal regions on the sidewalls of the trenches such that planar strip portions of the areas form electrically conductive regions of the passive element(s) that are aligned substantially perpendicularly with respect to a primary plane of the substrate. Other exemplary embodiments may comprise various articles or methods including capacitive and/or inductive aspects, Titanium- and/or Tantalum-based resistive aspects, products, products by processes, packages and composites consistent with one or more aspects of the innovations set forth herein.”

The patent application was filed on July 27, 2012 (13/560,915).