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Spansion Assigned Patent

Extending flash memory data retension via rewrite refresh

Spansion LLC, Sunnyvale, CA, has been assigned a patent (8,938,655) developed by Hamilton, Darlene G., Lyle, WA, Randolph, Mark W., Darling, Don Carlos, San Jose, CA, and Kornitz, Ron, Sunnyvale, CA, for a “extending flash memory data retension via rewrite refresh.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a program state of the cell(s). If the cell(s) is in a program state, as opposed to a natural or non-programmed state, a charge level, voltage level and/or the like can be rewritten to a default level associated with the program state, without erasing the cell(s) first. Accordingly, conventional mechanisms for refreshing cell program state that require rewriting and erasing, typically degrading storage capacity of the memory cell, can be avoided. As a result, data stored in flash memory can be refreshed in a manner that mitigates loss of memory integrity, providing substantial benefits over conventional mechanisms that can degrade memory integrity at a relatively high rate.

The patent application was filed on December 20, 2007 (11/961,772).

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