Qualcomm Assigned Patent

Qualcomm Inc., San Diego, CA, has been assigned a patent (9,047,960) developed by Li, Xia, Yang, Bin, and Wang, Zhongze, San Diego, CA, for a “flash memory cell with capacitive coupling between a metal floating gate and a metal control gate.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An apparatus includes a storage transistor. The storage transistor includes a floating gate configured to store electrical charge and a control gate. The floating gate is coupled to the control gate via capacitive coupling. The floating gate and the control gate are metal. The apparatus also includes an access transistor coupled to the storage transistor. A gate of the access transistor is coupled to a word line. The storage transistor and the access transistor are serially coupled between a bit line and a source line.“

The patent application was filed on August 2, 2013 (13/957,460).