Macronix Assigned Patent

Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (9,048,263) developed by Cheng, Chih-Chieh, Yan, Shih-Guei, Cheng, Cheng-Hsien, and Tsai, Wen-Jer, Hsinchu, Taiwan, for a “manufacturing method of non-volatile memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A non-volatile memory and a manufacturing method thereof are provided. In this method, a first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the pair of charge storage spacers. A conductive layer is formed on the second oxide layer, wherein the conductive layer is located completely on the top of the pair of charge storage spacers.“

The patent application was filed on June 25, 2014 (14/314,830).