Lapis Semiconductor Assigned Patent
Writing in and reading data from semiconductor storage device and semiconductor storage device
By Francis Pelletier | June 10, 2015 at 2:54 pmLapis Semiconductor Co., Ltd., Yokohama, Japan, has been assigned a patent (9,042,179) developed by Saeki, Katsutoshi, Miyagi, Japan, for a “method for writing in and reading data from a semiconductor storage device and semiconductor storage device.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for writing data in a semiconductor storage device and a semiconductor storage device are provided, that can reduce variations in readout current from a sub storage region which serves as a reference cell for the memory cells of the semiconductor storage device, thereby preventing an improper determination from being made when determining the readout current from a memory cell. In the method, data is written on a memory cell in two data write steps by applying voltages to the first and second impurity regions of the memory cell, the voltages being different in magnitude from each other.“
The patent application was filed on December 13, 2011 (13/324,559).
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