IBM Tackles Phase-Change Memory Drift, Resistance

To address challenges affecting feasibility of MLC storage in PCM

By Jean Jacques Maleval | May 7, 2015 at 2:44 pm

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IBM Tackles Phase-Change Memory Drift, Resistance
Researchers at IBM have found a way to address two critical challenges affecting the feasibility of multilevel-cell (MLC) storage in phase-change memory (PCM).