CNRS/Université Montpellier2 Assigned Patent

Centre National de la Recherche Scientique (CNRS), Université Montpellier 2, France, has been assigned a patent (9,042,157) developed by Guillemenet, Yoann, Crest, France, and Torres, Lionel, Combaillaux, France, for a “programmable volatile/non-volatile memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The invention concerns a memory device comprising at least one memory cell comprising: a first transistor, (102) coupled between a first storage node, (106) and a first supply line, GND, V.sub.DD, a second transistor, (104) coupled between a second storage node and said first supply line, GND, V.sub.DD, control terminals of said first and second transistors being coupled to said second and first storage nodes respectively, a third transistor, (110) coupled between said first storage node and a first access line,( BL) and controllable via a first control line, WL1, a fourth transistor, (112, 712) coupled between said second storage node, (108) and a second access line, (BLB) and controllable via a second control line, and a first resistance switching element, (202) coupled in series with said first transistor and programmable to have one of first and second resistive states.“

The patent application was filed on January 19, 2012 (13/980,558).