CEA Assigned Patent

Commissariat a l’Energie Atomique et aux Energies Alternatives, Paris, France, has been assigned a patent (9,019,760) developed by Hubert, Alexandre, Magny les Hameaux, France, Bawedin, Maryline, Montpellier, France, Cristoloveanu, Sorin, Seyssinet Pariset, France, and Ernst, Thomas, Morette, France, for a “multilevel memory device .”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory device is provided, including a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor nanobeam arranged on the first portion of dielectric material, a second portion of dielectric material covering the semiconductor nanobeam, a portion of material configured to receive electrons and holes, and configured to store electrical charges and covering the second portion of dielectric material, a third portion of dielectric material covering the portion of material configured to perform storage of electrical charges, and a front gate including a second portion of electrically conductive material covering the third portion of dielectric material.“

The patent application was filed on November 25, 2011 (13/304,531).