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Bryan Kang VP of MRAM Technology and Product Development, Everspin

Served as memory and design architect at Nantero
This is a Press Release edited by StorageNewsletter.com on 2016.11.03

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Everspin Technologies, Inc., has announced that Bryan Kang has joined the company as VP of MRAM technology and product development.

With over 25 years of proven product planning and technology development experience, he has served as memory and sesign architect at Nantero, Inc., where he designed and developed non-volatile memory devices. From December 2007 to March 2015, h served as VP of the design center at SK Hynix America Inc., where he led in the development of various memory technologies, including the first 4Gb DDR3 technology.

He received his Bachelor of Science degree in electrical engineering from KyungPook National University in Korea and his M.B.A from Ajou University in Korea.

"I am pleased to have Bryan join our team as we move to more advanced technology nodes for our Spin Torque technology," said Phill LoPresti, president and CEO. "Executing on new product deliverables for our customers is essential as we bring MRAM to the mainstream of memory."

"I am looking forward to helping Everspin continue its leadership in bringing avanced ST-MRAM products to the market," said Kang. "This is an exciting time at Everspin and I am looking forward to contributing to the company's success."

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