Crossbar Assigned Patent
Non-volatile memory with overwrite capability and low write amplification
By Francis Pelletier | March 17, 2017 at 2:31 pmCrossbar, Inc., Santa Clara, CA, has been assigned a patent (9,576,616) developed by Nazarian, Hagop, San Jose, CA, and Nguyen, Sang, Union City, CA, for a “non-volatile memory with overwrite capability and low write amplification.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “Providing for a non-volatile memory architecture having write and overwrite capabilities providing low write amplification to a storage system is described herein. By way of example, a memory array is disclosed comprising blocks and sub-blocks of two-terminal memory cells. The two-terminal memory cells can be directly overwritten in some embodiments, facilitating a write amplification value as low as one. Furthermore, the memory array can have an input-output multiplexer configuration, reducing sneak path currents of the memory architecture during memory operations.“
The patent application was filed on July 26, 2013 (13/952,467).
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