R&D: MEM-Flash Non-Volatile Memory Device for High-Temperature Multibit Storage

Applied Physics Letters has published an article written by Pushpapraj Singh, Dhairya Singh Arya, and Udit Jain, Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India.

Working principle of MEM-FLASH

Abstract: “We demonstrate microelectromechanical system-based flash memory (MEM-FLASH) for multinary bit storage. The MEMS switch integrated with the transistor provides the precise control of the charges on the floating gate. This maneuvering of the charges to eight different levels provides 3-bit operation even at an elevated temperature of ∼300 °C. The key challenge in the realization of such a memory is the know-how the amount of charge to be transferred to the floating gate to alter the bit state. The charge estimation on the floating gate cannot be performed by direct probing of the device, as this will disturb the original charge values of the floating gate and thus the threshold value. Ergo, an indirect read approach is developed. Furthermore, the cantilever switch is fabricated and tested in a vacuum environment for experimental validation of the approach. The percentage variation from the theoretical to experimental approach is in the adoptable limit of 2%.“