Universite Paris Sud and CNRS Assigned Patent
Logical memory architecture for MRAM, PCRAM or RRAM
By Francis Pelletier | May 11, 2016 at 2:53 pmUniversite Paris Sud 11, Orsay, France, and Centre National de la Recherche Scientifique (CNRS), Paris, France, has been assigned a patent (9,305,607) developed by Zhao, Weisheng, Massy, France, Chaudhuri, Sumanta, Watford, Great Britain, Chappert, Claude, Garches, France, and Klein, Jacques-Olivier, Bures sur Yvette, France, for a “logical memory architecture, in particular for MRAM, PCRAM, or RRAM .”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.“
The patent application was filed on March 23, 2012 (14/007,017).