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Universite Paris Sud and CNRS Assigned Patent

Logical memory architecture for MRAM, PCRAM or RRAM

Universite Paris Sud 11, Orsay, France, and Centre National de la Recherche Scientifique (CNRS), Paris, France, has been assigned a patent (9,305,607) developed by Zhao, Weisheng, Massy, France, Chaudhuri, Sumanta, Watford, Great Britain, Chappert, Claude, Garches, France, and Klein, Jacques-Olivier, Bures sur Yvette, France, for a “logical memory architecture, in particular for MRAM, PCRAM, or RRAM .

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

The patent application was filed on March 23, 2012 (14/007,017).

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