Spin Transfer Technologies Assigned Patent

Spin Transfer Technologies, Inc., Fremont, CA, has been assigned a patent (9,337,412) developed by Pinarbasi, Mustafa, Morgan Hill, CA, and Kardasz, Bartek, Pleasanton, CA, for a “magnetic tunnel junction structure for MRAM device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the free layer. The design provided enables a deterministic final state for the storage layer and significantly improves the tunneling magnetoresistance value and switching characteristics of the magnetic tunnel junction for MRAM applications.“

The patent application was filed on September 22, 2014 (14/492,943).