Secretary of Navy/USA Assigned Patent

The United States of America as represented by the Secretary of the Navy, Washington, DC, has been assigned a patent (9,276,197) developed by Johnson, Mark B., Potomac, MD, and Malec, Christopher, Alexandria, VA, for a “hybrid domain wall-hall cross device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.“

The patent application was filed on November 10, 2014 (14/536,872).