SanDisk Assigned Patent
3D non-volatile storage with multi-block row selection
By Jean Jacques Maleval | October 27, 2014 at 3:51 pmSanDisk 3D LLC, Milpitas, CA, has been assigned a patent (8,848,415) developed by Roy E. Scheuerlein, Cupertino, CA, and Tianhong Yan, San Jose, CA, for the “three dimensional non-volatile storage with multi block row selection.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.”
The patent application was filed on Dec. 12, 2011 (13/323,573).
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