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Samsung 845DC EVO 2.5-Inch SSD With 10nm 3-bit NAND Chip

Up to 960GB, maximum sequential read 530MB/s and 87,000 IO/s for random reads

Samsung Electronics Co., Ltd. introduced the 845DC EVO SSD).

Samsung 845DC EVO

The 845DC EVO has been designed and built for performance, low latency and endurance in read-intensive data center applications, such as video/content streaming, application and web servers.

Utilizing Samsung’s 10-nanometer class 3-bit NAND flash memory, the firmware and controller of are based on the Samsung PM853T SSD, which has been tested and qualified for system compatibility by server system manufacturers. This SSD is for small and medium business system integration and data center use, while the PM853T provides a customized soltion for OEM server manufacturers and large data centers.

As connected devices are accessing more and more online information, data center managers are looking to SSD technology as an effective tool to help improve the speed of serving data to all these users, while enhancing investment efficiency over a shorter period of time,” said Unsoo Kim, SVP of branded product marketing team, Samsung Electronics. “The Samsung 845DC EVO SSD lineup addresses this need by delivering an optimized solution which combines low-latency with low-energy use for data centers.”

Available in 240GB, 480GB and 960GB storage capacities, the 845DC EVO features reliability and endurance. It delivers sequential read speeds of up to 530MB/s and 87,000 IO/s for random reads, while offering a warranty of up to 600TBW (total bytes written).

845DC EVO’s active power consumption is approximately 4W, which is as little as 25% that of equivalent HDD technology for the data center.

The 845DC EVO will be available in the US and other select global markets later this month.

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