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Rohm Assigned Patent

Semiconductor storage device and method for manufacturing

Rohm Co. Ltd., Kyoto, Japan, has been assigned a patent (9,362,295) developed by Nakao, Yuichi, Kyoto, Japan, for a “semiconductor storage device and method for manufacturing the semiconductor storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer, a step of forming a covering layer that covers at least the second metal plug while securing a part that comes into electric contact with the first metal plug, a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer, and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug.

The patent application was filed on February 6, 2015 (14/615,455).

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