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R&D: Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

Realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output.

Nature Scientific Reports has published an article written by Thomas Breuer, Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, Germany, Lutz Nielen, Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, Germany, Bernd Roesgen, Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, Germany, Rainer Waser, Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, Germany, Vikas Rana, Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, German, and Eike Linn, Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany, and JARA – Fundamentals for Future Information Technology, Jülich, Germany.

(a) CRS stack, equivalent circuit and switching scheme for Minimum gate.
(b) Is the reversed CRS stack with corresponding equivalent circuit
and the resulting switching scheme for Maximum gate.
Next to the purple colored ideal IV curve, the actual CRS state is indicated
by a resistance scheme. The threshold voltages Vth,1, Vth,2, Vth,3 and Vth,4 specify
where the BC/TC resets/sets.

srep23967-f1

Abstract: “Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementation of ReRAM-based fuzzy logic gates using Ta2O5 devices to enable analogous Minimum and Maximum operations. The realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output. The cells offer an endurance up to 106 cycles. By means of exemplary input signals, each gate functionality is verified and signal constraints are highlighted. This realization could improve the efficiency of analogous processing tasks such as sorting networks in the future.”

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