Rangduru Assigned Patent

Rangduru Inc., San Jose, CA, has been assigned a patent (9,087,588) developed by Kwon, Euipil, San Jose, CA, for a “programmable non-volatile memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A programmable non-volatile memory including a memory cell includes a transistor acting as an anti-fuse and two diodes for access. The memory cell that can store two bits and includes a transistor acting as an anti-fuse and two diodes for access, wherein the cell transistor includes: the source electrode formed by a metal, the first diode as the source region contact structure, the drain electrode formed by a metal, and the second diode as the drain region contact structure wherein the cell transistor, the oxide layer between the source area and the gate is the first anti-fuse the first storage, the oxide layer between the drain area and the gate is the second anti-fuse the second storage, the two diodes are connected in series to access the two anti-fuses.“

The patent application was filed on August 27, 2012 (13/595,426).