Ningbo Advanced Memory and Being Advanced Memory Assigned Patent

Ningbo Advanced Memory Technology Corp., and Being Advanced Memory Taiwan Limited, Jubei, Hsinchu County, Taiwan, has been assigned a patent (9,362,337) developed by Wu, Jui-Jen, Chang, Jiah-Wang, Huang, Sheng-Tsai, and Jien, Fan-Yi, Jubei, Taiwan, for a “non-volatile storage unit and non-volatile storage device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A non-volatile storage device adopt memristors to store data and uses fewer transistors to realize the same circuit function, whereby to decrease the chip area and reduce the time and energy spent in initiating the device. Further, the non-volatile storage device disposes appropriate electronic elements in the spacing between adjacent memristors to meet the layout design rule and achieve high space efficiency in the chip lest the space between memristors be wasted.“

The patent application was filed on September 24, 2015 (14/863,844).