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Ningbo Advanced Memory and Being Advanced Memory Assigned Patent

Manufacturing method of phase change memory
By Francis Pelletier on 2016.12.12

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Ningbo Advanced Memory Technology Corporation, Ningbo, China, and Being Advanced Memory Taiwan Limited, Hsinchu County, Taiwan, has been assigned a patent (9,472,759) developed by Su, Shui-Chin, Hsinchu County, Taiwan, for a "manufacturing method of phase change memory."

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A manufacturing method of a phase change memory includes following steps. A first mask layer is formed on a dielectric layer, and a second mask layer is formed on the first mask layer. Then, the first mask layer and the second mask layer are patterned to expose a side surface of the first mask layer. A portion of the first mask layer is removed from the side surface of the first mask layer to form a columnar protrusion. After removing the second mask layer, a heating material layer is formed to conformally cover sidewalls and an upper surface of the columnar protrusion. The heating material layer on the upper surface of the columnar protrusion is removed, so as to form an annular heater from the heating material layer, and the annular heater surrounds the columnar protrusion."

The patent application was filed on September 9, 2015 (14/848,350).

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