National Applied Research Labs Assigned Patent

National Applied Research Laboratories, Taipei, Taiwan, has been assigned a patent (9,041,129) developed by Ho, Chia-Hua, Hsinchu, Taiwan, Lee, Ming-Daou, Chiayi, Taiwan, Chiu, Wen-Cheng, and Hsu, Cho-Lun, Hsinchu, Taiwan, for a “semiconductor memory storage array device and method for fabricating the same.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A semiconductor memory storage array device comprises a first electrode layer, an oxide layer, a second electrode layer, a memory material layer and a first insulator layer. The oxide layer is disposed on the first electrode layer. The second electrode layer is disposed on the oxide layer. The memory material layer is disposed on the second electrode layer. The first insulator layer is disposed adjacent to two sidewalls of the first electrode layer, the oxide layer, the second electrode layer and the memory material layer, so to define a gap either between the first electrode layer and the oxide layer or between the second electrode layer and the oxide layer.“

The patent application was filed on November 22, 2013 (14/087,355).