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Micron Assigned Patent

Translation layer in solid-state storage device

Micron Technology, Inc., Boise, ID, has been assigned a patent (8,966,165) developed by Manning, Troy, Meridian, ID, for a “translation layer in a solid state storage device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

The patent application was filed on August 25, 2014 (14/467,322).

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