Micron Assigned Four Patents

Program-disturb management for phase change memory
Micron Technology, Inc., Boise, ID, has been assigned a patent (8,910,000), developed by Bedeschi, Ferdinando Biassono, Italy, for a “program-disturb management for phase change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Subject matter disclosed herein relates to a memory device, and more particularly to read or write performance of a phase change memory. “

The patent application was filed on May 17, 2012 (13/474,609).

Memory cells and methods of forming memory cells
Micron Technology, Inc., Boise, ID, has been assigned a patent (8,907,315), developed by Smythe John, Sandhu Gurtej S., Boise, ID, for a “memory cells and methods of forming memory cells.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer edge surface angling elevationally and laterally inward relative to a sidewall of the opening. The conductive electrode material is formed to cover over the angling surface of the programmable material within the opening. The conductive electrode material is removed back at least to an elevationally outermost surface of the dielectric material and to leave the conductive electrode material covering over the angling surface of the programmable material within the opening. The conductive electrode material constitutes at least part of an elevationally outer conductive electrode of the memory cell. Memory cells independent of method of manufacture are also disclosed.“

The patent application was filed on February 18, 2014 (14/182,491).

Memory devices and configuration methods for memory device
Micron Technology, Inc., Boise, ID, has been assigned a patent (8,902,653) developed by Radke,William H., Los Gatos, CA, Vali Tommaso, Latina, Italy, Incarnati Michele, Gioia dei Marsi, Italy, for a “memory cells and methods of forming memory cells.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Memory devices and methods of operating memory devices are disclosed. In one such method, different blocks of memory cells have different configurations of user data space and overhead data space. In at least one method, overhead data is distributed within more than one block of memory cells. In another method, blocks are reconfigurable responsive to particular operating modes and/or desired levels of reliability of user data stored in a memory device.“

The patent application was filed on August 12, 2011 (13/208,802).

Memory devices and operating methods for memory device
Micron Technology, Inc., Boise, ID, has been assigned a patent (8,902,650) developed by Goldman Matthew, Folsom, CA, Helm Mark A., Santa Cruz, CA, Patel Jaydip B., Ryan Thomas F., Folsom, CA, for a “memory devices and operating methods for a memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Devices and methods facilitate memory device operation in all bit line architecture memory devices. In at least one embodiment, memory cells comprising alternating rows are concurrently programmed by row and concurrently sensed by row at a first density whereas memory cells comprising different alternating rows are concurrently programmed by row and concurrently sensed by row at a second density. In at least one additional embodiment, memory cells comprising alternating tiers of memory cells are programmed and sensed by tier at a first density and memory cells comprising different alternating tiers of memory cells are programmed and sensed by tier at a second density.“

The patent application was filed on August 30, 2012 (13/599,208).