Micron Assigned Fifteen Patents

Operating phase change memory cell
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,123,415) developed by Liu, Jun, Boise, ID, for a “methods of operating a phase change memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A PCRAM cell has a gradated or layered resistivity bottom electrode with higher resistivity closer to a phase change material, to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements. The bottom electrode can also be tapered to have a smaller cross-sectional area at the top of the bottom electrode than at the bottom of the bottom electrode.“

The patent application was filed on February 27, 2014 (14/191,586).

Memory device for hierarchical memory architecture
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,123,409) developed by Eilert, Sean, Penryn, CA, and Leinwander, Mark, Folsom, CA, for a “memory device for a hierarchical memory architecture.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A hierarchical memory device having multiple interfaces with different memory formats includes a Phase Change Memory, (PCM). An input port and an output port connect the hierarchical memory device in a daisy-chain hierarchy or a hierarchical tree structure with other memories. Standard non-hierarchical memory devices can also attach to the output port of the hierarchical memory device.“

The patent application was filed on June 11, 2009 (12/483,198).

Phase change memory structures
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,130,163) developed by Tang, Sanh D., Boise, ID, for a “phase change memory structures and methods .”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of forming a phase change material memory cell includes forming a number of memory structure regions, wherein the memory structure regions include a bottom electrode material and a sacrificial material, forming a number of insulator regions between the number of memory structure regions, forming a number of openings between the number of insulator regions and forming a contoured surface on the number of insulator regions by removing the sacrificial material and a portion of the number of insulator regions, forming a number of dielectric spacers on the number of insulator regions, forming a contoured opening between the number of insulator regions and exposing the bottom electrode material by removing a portion of the number of dielectric spacers, and forming a phase change material in the opening between the number of insulator regions.“

The patent application was filed on October 10, 2013 (14/051,212).

Forming memory cells and arrays
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,112,150) developed by Redaelli, Andrea, Casatenovo, Italia, Servalli, Giorgio, Fara Gera D’Adda, Italia, Cupeta, Carmela, Milan, Italia, and Pellizzer, Fabio, Cornate D’Adda, Italia, for a “methods of forming memory cells and arrays.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.“

The patent application was filed on July 23, 2013 (13/948,980).

Fabricating phase-change memory cell
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,111,856) developed by Pellizzer, Fabio, Cornate d’Adda, Italia, Magistretti, Michele, Gessate, Italia, Casellato, Cristina, Sulbiate, Italia, and Vigilante, Monica, Cavenago Brianza, Italia, for a “method for fabricating a phase-change memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer, (228) on a metal layer, (226) above a substrate. A phase-change material layer, (230) is formed on the dielectric layer. A contact region, (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.“

The patent application was filed on December 30, 2008 (13/132,603).

Phase change memory adaptive programming including pulse transition time adjustment
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,093,142) developed by Liu, Jun, Boise, ID, for a “phase change memory adaptive programming including pulse transition time adjustment.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Some embodiments include methods and apparatus having a module configured to program a memory cell using a signal to cause the memory cell to have a programmed resistance value, to adjust a programming parameter value of the signal if the programmed resistance value is outside a target resistance value range, and to repeat at least one of the programming and the adjusting if the programmed resistance value is outside the target resistance value range, the signal including a different programming parameter value each time the programming is repeated.“

The patent application was filed on February 3, 2014 (14/171,239).

Configurable reference current generation for non volatile memory
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,087,578) developed by Vimercati, Daniele, Besana in Brianza, Italia, and Muzzetto, Riccardo, Caponago, Italia, for a “configurable reference current generation for non volatile memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”This disclosure relates to generating a reference current for a memory device. In one aspect, a non-volatile memory device, such as a phase change memory device, can determine a value of a data digit, such as a bit, stored in a non-volatile memory cell based at least partly on the reference current. The reference current can be generated by mirroring a current at a node that is biased by a voltage bias. A configurable resistance circuit can have a resistance that is configurable. The resistance of the configurable resistance circuit can be in series between the node and a resistive non-volatile memory element. In some embodiments, a plurality of non-volatile memory elements can each be electrically connected in series between the resistance of the configurable resistance circuit and a corresponding selector.“

The patent application was filed on September 30, 2013 (14/041,585).

Keyhole-free sloped heater for phase change memory
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,082,969) developed by Cha, Soonwoo, Portland, OR, Minvielle, Tim, San Jose, CA, Lee, Jong Won, Santa Clara, CA, and Lee, Jinwook, San Jose, CA, for a “keyhole-free sloped heater for phase change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.“

The patent application was filed on June 21, 2013 (13/923,759).

Set pulse for phase change memory programming
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,082,477) developed by Thiruvengadam, Aswin, Mather, CA, Melton, William, Shingle Springs, CA, Fackenthal, Rich, Carmichael, CA, and Oen, Andrew, Sacramento, CA, for a “set pulse for phase change memory programming.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.“

The patent application was filed on May 3, 2013 (13/886,564).

Phase change memory cells
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,076,963) developed by Van Gerpen, Damon E., Kuna, ID, for a “phase change memory cells and methods of forming phase change memory cells.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.“

The patent application was filed on May 20, 2014 (14/282,142).

Refresh architecture and algorithm for non-volatile memories
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,070,473) developed by Bedeschi, Ferdinando, and Gastaldi, Roberto, Milan, Italia, for a “refresh architecture and algorithm for non-volatile memories.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods and systems to refresh a non-volatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.“

The patent application was filed on December 2, 2009 (13/513,139).

Encapsulated phase change cell structures
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,064,793) developed by Liu, Jun, Boise, ID, for a “encapsulated phase change cell structures and methods.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods and devices associated with phase change cell structures are described herein. In one or more embodiments, a method of forming a phase change cell structure includes forming a substrate protrusion that includes a bottom electrode, forming a phase change material on the substrate protrusion, forming a conductive material on the phase change material, and removing a portion of the conductive material and a portion of the phase change material to form an encapsulated stack structure.“

The patent application was filed on February 19, 2014 (14/184,142).

Multilevel phase change memory operation
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,064,572) developed by Liu, Jun, Boise, ID, and Chen, Wenzhou, San Jose, CA, for a “multilevel phase change memory operation.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods, devices, and systems associated with multilevel phase change memory cells are described herein. One or more embodiments of the present disclosure include operating a phase change memory device by placing a phase change memory cell in a reset state and applying a selected programming pulse to the phase change memory cell in order to program the cell to one of a number of intermediate states between the reset state and a set state associated with the cell. The selected programming pulse includes an uppermost magnitude applied for a particular duration, the particular duration depending on to which one of the number of intermediate states the memory cell is to be programmed.“

The patent application was filed on March 19, 2013 (13/847,205).

Phase change memory device
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,064,565) developed by Pellizzer, Fabio, Cornate d’Adda, Italia, Bez, Roberto, Milan, Italia, Bedeschi, Ferdinando, Biassono, Italia, and Gastaldi, Roberto, Agrate Brianza, Italia, for a “phase change memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.“

The patent application was filed on October 7, 2013 (14/047,605).

Phase change memory cells including nitrogenated carbon materials
Micron Technology, Inc., Boise, ID, has been assigned a patent (9,054,295) developed by Gotti, Andrea, Pozzo D’adda, Italia, and Fumagalli, Luca, Milan, Italia, for a “phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials .”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.“

The patent application was filed on August 23, 2011 (13/215,706).