IMEC Assigned Patent

IMEC, Leuven, Belgium, has been assigned a patent (9,281,468) developed by Min, Tai, Wilsele, Belgium, and Tahmasebi, Taiebeh, Heverlee, Belgium, Taiwan, for a “magnetic memory element.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The disclosed technology generally relates to semiconductor devices, and more particularly spin transfer torque magnetic random access memory, (STTMRAM) elements having perpendicular magnetic anisotropy, (PMA). In one aspect, a magnetic element comprises a metal underlayer and a seed layer on the underlayer, the seed layer comprising alternating layers of a first metal and a second metal. The alternating layers of a first metal and a second metal are repeated n times with, 2<=n<=20. Also a spin transfer torque magnetic random access memory element is disclosed having a perpendicular magnetic orientation comprising a metal underlayer on a substrate, a seed layer on the metal underlayer, the seed layer comprising alternating layers of a first metal and a second metal, a magnetic tunnel junction, (MTJ) element with a perpendicular orientation including: a reference layer formed on the seed layer, a tunnel barrier layer formed on the reference layer, a storage layer formed on the tunnel barrier layer and a top electrode and a bottom electrode.“

The patent application was filed on June 17, 2014 (14/307,144).