Higgs OPL. Capital Assigned Patent
Phase-change memory element
By Francis Pelletier | March 15, 2016 at 2:59 pmHiggs OPL. Capital LLC, Dover, DE, has been assigned a patent (9,245,924) developed by Chen, Frederick T., and Tsai, Ming-Jinn, Hsinchu, Taiwan, and Spadini, Gianpaolo, Los Gatos, CA, for a “phase change memory element.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode, a phase-change material layer electrically connected to the first electrode and the second electrode, and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.“
The patent application was filed on October 23, 2014 (14/522,057).