Crocus Technology Assigned Two Patents
Self-referenced MRAM, method for writing to MRAM cell with increased reliability and reduced power consumption
By Francis Pelletier | June 10, 2016 at 2:24 pmMRAM element with low writing temperature
Crocus Technology SA, Grenoble, France, has been assigned a patent (9,336,846) developed by Prejbeanu, Ioan Lucian, Seyssinet Pariset, France, Moritz, Jerome, St-Pierre-de-Bressieux, France, and Dieny, Bernard, Lans-en-Vercors, France, for a “self-referenced magnetic random access memory, (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.“
The patent application was filed on January 16, 2014 (14/762,264).
Self-referenced magnetic random access memory, and method for writing to MRAM cell with increased reliability and reduced power consumption
Crocus Technology SA, Grenoble, France, has been assigned a patent (9,305,628) developed by Stainer, Quentin, Montbonnot-St-Martin, France, for a “self-referenced magnetic random access memory, (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”MRAM cell including a magnetic tunnel junction including a sense layer, a storage layer, a tunnel barrier layer and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer is arranged such that the sense magnetization can be switched from a first stable direction to another stable direction opposed to the first direction. The switched sense magnetization generates a sense stray field being large enough for switching the storage magnetization according to the switched sense magnetization, when the magnetic tunnel junction is heated at the writing temperature. The disclosure also relates to a method for writing to the MRAM cell with increased reliability and reduced power consumption.“
The patent application was filed on December 2, 2013 (14/649,591).
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