Boise State University Assigned Patent

Boise State University, Boise, ID, has been assigned a patent (9,118,006) developed by Campbell, Kristy A., Boise, ID, for a “carbon-chalcogenide variable resistance memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge.sub.40Se.sub.60.“

The patent application was filed on August 12, 2014 (14/457,400).