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Aupera Revealed Aup-AXL-M128 MRAM-Enabled M.2 Storage Module

Based on Everspin 256Mb perpendicular spin torque MRAM

Everspin Technologies, Inc. and Aupera Technologies Inc., announced the M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM.

AUPERA_Aup-AXL-M128
Aup-AXL-M128 is currently used in Aupera’s all-flash array system as a hardware acceleration engine for specific applications that require low latency and high performance.

We have deployed Everspin’s first commercial ST-MRAM in our system since the very beginning of our design, and now, with its larger capacity, our Aup M-series can be widely used for storage cache, buffer and meta-data handling with high performance and low power consumption,” said Roy Liao, founder and CEO, Aupera. “From the performance we are seeing so far, we are very excited at the future potential of this ST-MRAM- based Aup-AXL-M128 module. It is delivering four orders of magnitude BER reduction and more than 30% less power while quadrupling the capacity to 128MB as compared to the previous generation M.2 MRAM module. The successful deployment of this device will give us a great competitive advantage for our systems.

Aupera has also launched its new generation all-flash array system, Aup-Litesaber-V2000, built on company’s proprietary distributed computing and storage technology optimized for video storage, processing and analytic application.

ST-MRAM technology combines high performance, non-volatile DDR3 RAM speed with high endurance for enterprise storage and server markets. Everspin offers the world’s first commercially available perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM, giving designers of high performance storage systems the ability to achieve latency, increase reliability with high cycling endurance, and protect data in the event of power loss.

The combination of Everspin’s latest 256Mb DDR3 perpendicular ST-MRAM and Aupera’s innovative, scalable M.2 MRAM module solves the problem of write latency and endurance associated with NAND Flash systems,” said Phill LoPresti, president and CEO, Everspin. “We are pleased that Aupera has continuously used our MRAM technology as the solution to bring much better performance to their systems.

Specs:

Interface NVMe with PCIe Gen2 x4
Capacity 128MB
Components 256Mb perpendicular MTJ (pMTJ) based Spin-Torque MRAM
Performance
  • Seq. R/W: Up to 1,000/1,200MB/s
  • Random IO/s 4KB R/W: Up to 245,000/290,000
  • Seq. latency (typ) R/W: 10µs
Reliability
  • BER (typ): < 10^(-22)
  • Cycle Endurance: 1 x 10^10 per page
  • Data Retention:  three months, 70℃
Power
  • 3.3V supply rail
  • Active (typ.): 4.5W

 

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