Entegris Assigned Two Patents

Antimony and germanium complexes useful for CVD/ALD of metal thin films
Entegris, Inc., Billerica, MA, has been assigned a patent (9,219,232) developed by Hunks, William, Waterbury, CT, Chen, Tianniu, Westford, MA, Xu, Chongying, Suzhou, China, Roeder, Jeffrey F., Brookfield, CT, Baum, Thomas H., New Fairfield, CT, Stender, Matthias, Phoenix, AZ, Chen, Philip S. H., Bethel, CT, Stauf, Gregory T., Branchburg, NJ, and Hendrix, Bryan C., Danbury, CT, and Nemazie, Siamack, Los Altos Hills, CA, for a “antimony and germanium complexes useful for CVD/ALD of metal thin films.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium, (GST) films and microelectronic device products, such as phase change memory devices, including such films.“

The patent application was filed on April 11, 2014 (14/251,475).

Germanium antimony telluride materials and devices incorporating same
Entegris, Inc., Billerica, MA, has been assigned a patent (9,190,609) developed by Zheng, Jun-Fei, Westport, CT, for a “germanium antimony telluride materials and devices incorporating same.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.“

The patent application was filed on May 21, 2011 (13/698,642).